Researcher

Haomin Wang

Title: Researcher
Subject: Solid State Electronics and Microelectronics
Phone: +86-021-62511070
Fax: 
Email: hmwang
@mail.sim.ac.cn
Address: 865 Changning Road, Shanghai,China, 200050

RESUME

    Dr. Wang received his B.E. and M.E. degree from the Department of Solid State Electronics in Huazhong University of Science and Technology in June 1999 and June 2002, respectively. After that, he moved to Shanghai, and served as a senior engineer in the National Research Center of Information Security Infrastructure. He was pursuing his Ph.D degree in the department of electrical and computer engineering of National University of Singapore (NUS) from 2004.8 to 2008.8.  From August 2008 to May 2009, he worked in the same department as a research fellow. After that, he was a research fellow in Nanyang Technological University until Nov. 2011. At the end of 2011, Dr. Wang was appointed as a research professor at State Key Laboratory of Functional Materials for Informatics of SIMIT.

 

    Dr. Wang’s current research interest focuses on fabrication of novel low dimensional materials and exploration of their transport properties. The recent availability of novel nanoscale materials, such as atomically thin 2-dimensional crystals is enabling the assembly and study of ‘2D’ electronics and mechanical devices. Recently, Dr. Wang made great progresses in direct growth of graphene and its nanostructures on hexagonal boron nitride, including alignment determination, gaseous catalyst assisted growth, edge control of graphene domains and fabrication of oriented graphene nanoribbons. The progresses are recognized in research community of 2D materials, and shine a light on further application of 2D materials in nano-electronics and superconducting electronics in future.

 

EDUCATION 

BE(95-99), ME(99-02), Huazhong University of Science and Technology

PhD (04-08), National University of Singapore

 

WORK EXPERIENCE

2002.7-2004.8 The national research center of information security infrastructure (shanghai) as a senior firmware engineer;

2008.9-2009.5 National University of Singapore, as a research fellow;

2009.5-2011.10 Nanyang Technological University as a research fellow;

2011.10-now www8455con and 葡京娱乐场网站官网, Chinese Academy of Sciences, as a research professor.

 

mAJOR HONORS And Awarded Research Funds

Projects from the national science foundation of china.

A project from the science and technology commission of shanghai municipality.

Projects from the Chinese Academy of Sciences 

 

SELECTED PUBLICATIONS

[1] Lingxiu Chen, Haomin Wang,* Shujie Tang, Li He, Hui Shan Wang, Xiujun Wang, Hong Xie, Tianru Wu, Hui Xia, Tianxin Li, Xiaoming Xie,* Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride, Nanoscale, 9, 11475-11479 (2017).

[2] L. Chen, L. He, H.S. Wang, H. M. Wang,* S. Tang, C. Cong, H. Xie, L. Li, H. Xia, T. Li, T. Wu, D. Zhang, L. Deng, T. Yu, X. Xie* and M. Jiang, Oriented Graphene Nanoribbons embedded in Hexagonal Boron Nitride Trenches, Nature Communications, 8, 14703 (2017).

[3] YANG Chao, WU TianRu, WANG HaoMin,* XIE XiaoMing,* Chemical vapor deposition of graphene on insulating substrates and its potential applications, Chinese Science Bulletin 62(20), 2168-2179(2017).

[4] Tianru Wu, Xuefu Zhang, Qinghong Yuan, Jiachen Xue, Guangyuan Lu, Zhihong Liu, Huishan Wang, Haomin Wang, Feng Ding,* Qingkai Yu,* Xiaoming Xie,* Mianheng Jiang. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys, Nature materials, 15, 43-47 (2016).

[5] S. Tang, H. Wang,* H. S. Wang, Q. Sun, X. Zhang, C. Cong, H. Xie, X. Liu, X. Zhou, F. Huang, X. Chen, T. Yu, F. Ding, X. Xie,* and M. Jiang, Silane-Catalyzed Fast Growth of Large Single Crystalline Graphene on Hexagonal Boron Nitride, Nature Communications, 6:6499 (2015).

[6] G.Y. Lu, ; T.R. Wu, TR Q.H. Yuan, H.S. Wang, H.M. Wang, F. Ding, X.M. Xie, M.H. Jiang,. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy, Nature Communications, 6:6160 (2015).

[7] G. X. Ni, H. Wang, J. S. Wu, Z. Fei, M. D. Goldflam, F. Keilmann, B. ?zyilmaz, A. H. Castro Neto, X. M. Xie, M. M. Fogler, D. N. Basov, Plasmons in graphene moiré superlattices, Nature Materials, 14 ,1217–1222 (2015).

[8] Q. J. Sun, H. S. Wang, H. M. Wang,* L. W. Deng, Z. W. Hu,B. Gao, Q, Li, and X.M. Xie Electronic transport transition at graphene/YBa2Cu3O7-δ junction junction Appl. Phys. Lett. 104, 102602 (2014)

[9] Shujie Tang, Haomin Wang,* Yu Zhang, Ang Li, Hong Xie, Xiaoyu Liu, Lianqing Liu, Tianxin Li, Fuqiang Huang, Xiaoming Xie,* Mianheng Jiang, Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition, Scientific Reports, 3, 2666 (2013).

[10] Xichao Yang, Haomin Wang,* Tianru Wu , Fuqiang Huang , Jiao Chen , Xiaoxu Kang , Zhi Jin , Xiaoming Xie , Mianheng Jiang,” Magnetotransport of polycrystalline graphene: Shubnikov-de Haas oscillation and weak localization study”, Appl. Phys. Lett. 102, 233503 (2013).

[11] Haomin Wang, Yihong Wu, Chunxiao Cong, Jingzhi Shang, and Ting Yu, “Hysteresis of Electronic Transport in Graphene Transistors”, ACS Nano, 4, 7221 (2010).

[12] Haomin Wang, Catherine Choong, Jun Zhang, Kie Leong Teo and Yihong Wu, “Differential conductance fluctuation of curved nanographite sheets in the mesoscopic regime Solid State Communications, 145, 341-345, (2008).

 

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